TPC6503(TE85L,F,M)
X35 PB-F POWER MOSFET TRANSISTOR
Transistors Bipolar Bjt Single
SOT-23-6 Thin, TSOT-23-6
U-MOSVII
Last Time Buy
Price available on request
MOQ: 3000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TPC6503(TE85L,F,M) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 1.6 W |
| Supplier Device Package | VS-6 (2.9x2.8) |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
TPC6503(TE85L,F,M) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TPC6503(TE85L,F,M)
Alternatives & Replacements
View All →CPH6153-P-TL-E
TRANS PNP 20V 3A CPH6
NSS35200MR6T1G
TRANS PNP 35V 2A 6TSOP
MBT35200MT2G
TRANS PNP 35V 2A 6-TSOP
FMBA56
SMALL SIGNAL BIPOLAR TRANSISTOR,
NSS20201MR6T1G
TRANS NPN 20V 2A 6TSOP
MBT35200MT1
TRANS SW PNP BIPOL 35V 2A TSOP-6
All Technical Specifications
| Power - Max | 1.6 W |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 120mV @ 10mA, 500mA |
| Current - Collector (Ic) (Max) | 1.5 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 150mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
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