TPC6010-H(TE85L,FM
MOSFET N-CH 60V 6.1A VS-6
Transistors Fets Mosfets Single
SOT-23-6 Thin, TSOT-23-6
U-MOSVI-H
Last Time Buy
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TPC6010-H(TE85L,FM |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 59mOhm @ 3.1A, 10V |
| Vgs(th) (Max) | 2.3V @ 100µA |
| Gate Charge (Qg) | 12 nC @ 10 V |
| Input Capacitance (Ciss) | 830 pF @ 10 V |
| Power Dissipation (Max) | 700mW (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | VS-6 (2.9x2.8) |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
TPC6010-H(TE85L,FM by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 59mOhm @ 3.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TPC6010-H(TE85L,FM
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 3.1A, 10V |
| Power Dissipation (Max) | 700mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
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