Taiwan Semiconductor CorporationTO-277, 3-PowerDFNRoHS
TPAR3D S1G
DIODE AVALANCHE 200V 3A TO277A
Category
Subcategory
Diodes Rectifiers Single
Package
TO-277, 3-PowerDFN
Status
Active
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TPAR3D S1G |
| Package / Case | TO-277, 3-PowerDFN |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-277A (SMPC) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TPAR3D S1G by Taiwan Semiconductor Corporation is a commonly used electronic component in the Diodes Rectifiers Single category. Available in TO-277, 3-PowerDFN package with standard temperature range operating temperature range. Contact us for datasheet, pricing, and availability.
📖 Technical Guides for TPAR3D S1G
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All Technical Specifications
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Avalanche |
| Capacitance @ Vr, F | 58pF @ 4V, 1MHz |
| Reverse Recovery Time (trr) | 120 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) | 3A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 3 A |
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