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Vishay SiliconixTO-236-3, SC-59, SOT-23-3RoHS

TN0201K-T1-E3

MOSFET N-CH 20V 420MA SOT23-3

TN0201K-T1-E3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelTN0201K-T1-E3
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)1Ohm @ 300mA, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)1.5 nC @ 10 V
Power Dissipation (Max)350mW (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageSOT-23-3 (TO-236)
RoHSRoHS
Part StatusObsolete

Application & Notes

TN0201K-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1Ohm @ 300mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs1Ohm @ 300mA, 10V
Power Dissipation (Max)350mW (Ta)
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 10 V
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C420mA (Ta)

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