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Toshiba Semiconductor and StorageTO-236-3, SC-59, SOT-23-3RoHS

TMBT3904,LM

TRANS NPN 50V 0.15A SOT23-3

TMBT3904,LM by Toshiba Semiconductor and Storage
Subcategory

Transistors Bipolar Bjt Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelTMBT3904,LM
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
Power Dissipation (Max)320 mW
Supplier Device PackageSOT-23-3
RoHSRoHS
Part StatusActive

Application & Notes

TMBT3904,LM by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Power - Max320 mW
Transistor TypeNPN
Frequency - Transition300MHz
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Current - Collector (Ic) (Max)150 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Voltage - Collector Emitter Breakdown (Max)50 V

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