TK6R9P08QM,RQ
UMOS10 DPAK 80V 6.9MOHM
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
U-MOSX-H
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TK6R9P08QM,RQ |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 80 V |
| Rds On (Max) | 6.9mOhm @ 31A, 10V |
| Vgs(th) (Max) | 3.5V @ 500µA |
| Gate Charge (Qg) | 39 nC @ 10 V |
| Input Capacitance (Ciss) | 2700 pF @ 40 V |
| Power Dissipation (Max) | 89W (Tc) |
| Drive Voltage | 6V, 10V |
| Supplier Device Package | DPAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TK6R9P08QM,RQ by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 80 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6.9mOhm @ 31A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TK6R9P08QM,RQ
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 500µA |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 31A, 10V |
| Power Dissipation (Max) | 89W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
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