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Toshiba Semiconductor and StorageTO-220-3 Full PackRoHS

TK65A10N1,S4X

MOSFET N-CH 100V 65A TO220SIS

TK65A10N1,S4X by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3 Full Pack

Series

U-MOSVIII-H

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelTK65A10N1,S4X
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)4.8mOhm @ 32.5A, 10V
Vgs(th) (Max)4V @ 1mA
Gate Charge (Qg)81 nC @ 10 V
Input Capacitance (Ciss)5400 pF @ 50 V
Power Dissipation (Max)45W (Tc)
Drive Voltage10V
Supplier Device PackageTO-220SIS
RoHSRoHS
Part StatusActive

Application & Notes

TK65A10N1,S4X by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.8mOhm @ 32.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA
Rds On (Max) @ Id, Vgs4.8mOhm @ 32.5A, 10V
Power Dissipation (Max)45W (Tc)
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds5400 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C65A (Tc)

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