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Toshiba Semiconductor and StorageTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

TK560P65Y,RQ

MOSFET N-CHANNEL 650V 7A DPAK

TK560P65Y,RQ by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

DTMOSV

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelTK560P65Y,RQ
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)560mOhm @ 3.5A, 10V
Vgs(th) (Max)4V @ 240µA
Gate Charge (Qg)14.5 nC @ 10 V
Input Capacitance (Ciss)380 pF @ 300 V
Power Dissipation (Max)60W (Tc)
Drive Voltage10V
Supplier Device PackageDPAK
RoHSRoHS
Part StatusActive

Application & Notes

TK560P65Y,RQ by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 560mOhm @ 3.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 240µA
Rds On (Max) @ Id, Vgs560mOhm @ 3.5A, 10V
Power Dissipation (Max)60W (Tc)
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C7A (Tc)

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