TK40E10K3,S1X(S
MOSFET N-CH 100V 40A TO220-3
Transistors Fets Mosfets Single
TO-220-3
U-MOSIV
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TK40E10K3,S1X(S |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 15mOhm @ 20A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Gate Charge (Qg) | 84 nC @ 10 V |
| Input Capacitance (Ciss) | 4000 pF @ 10 V |
| Supplier Device Package | TO-220-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
TK40E10K3,S1X(S by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TK40E10K3,S1X(S
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
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