TK31V60W5,LVQ
MOSFET N-CH 600V 30.8A 4DFN
Transistors Fets Mosfets Single
4-VSFN Exposed Pad
DTMOSIV
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TK31V60W5,LVQ |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TA) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 109mOhm @ 15.4A, 10V |
| Vgs(th) (Max) | 4.5V @ 1.5mA |
| Gate Charge (Qg) | 105 nC @ 10 V |
| Input Capacitance (Ciss) | 3000 pF @ 300 V |
| Power Dissipation (Max) | 240W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 4-DFN-EP (8x8) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TK31V60W5,LVQ by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-VSFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 109mOhm @ 15.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TK31V60W5,LVQ
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Rds On (Max) @ Id, Vgs | 109mOhm @ 15.4A, 10V |
| Power Dissipation (Max) | 240W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
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