TK18E10K3,S1X(S
MOSFET N-CH 100V 18A TO220-3
Transistors Fets Mosfets Single
TO-220-3
U-MOSIV
Last Time Buy
Price available on request
MOQ: 50 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TK18E10K3,S1X(S |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 42mOhm @ 9A, 10V |
| Gate Charge (Qg) | 33 nC @ 10 V |
| Supplier Device Package | TO-220-3 |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
TK18E10K3,S1X(S by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 42mOhm @ 9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TK18E10K3,S1X(S
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
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