TK17E65W,S1X
MOSFET N-CH 650V 17.3A TO220
Transistors Fets Mosfets Single
TO-220-3
DTMOSIV
Active
Price available on request
MOQ: 50 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TK17E65W,S1X |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 200mOhm @ 8.7A, 10V |
| Vgs(th) (Max) | 3.5V @ 900µA |
| Gate Charge (Qg) | 45 nC @ 10 V |
| Input Capacitance (Ciss) | 1800 pF @ 300 V |
| Power Dissipation (Max) | 165W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-220 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TK17E65W,S1X by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 200mOhm @ 8.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TK17E65W,S1X
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 900µA |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 8.7A, 10V |
| Power Dissipation (Max) | 165W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 17.3A (Ta) |
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