Toshiba Semiconductor and StorageTO-220Yes
TK100E10N1
MOSFET N-CH 100V 100A TO220
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TK100E10N1 |
| Package / Case | TO-220 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) | 100A |
| Rds On (Max) | 3.2mOhm @ 50A, 10V |
| RoHS | Yes |
| Part Status | Active |
Application & Notes
TK100E10N1 by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 100V / 100A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.2mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TK100E10N1
All Technical Specifications
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) | 100A |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 50A, 10V |
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