TC8020K6-G
MOSFET 6N/6P-CH 200V 56VQFN
Transistors Fets Mosfets Arrays
56-VFQFN Exposed Pad
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MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | TC8020K6-G |
| Package / Case | 56-VFQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 6 N and 6 P-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Rds On (Max) | 8Ohm @ 1A, 10V |
| Vgs(th) (Max) | 2.4V @ 1mA |
| Input Capacitance (Ciss) | 50pF @ 25V |
| Supplier Device Package | 56-QFN (8x8) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TC8020K6-G by Microchip Technology is an N-channel power MOSFET rated at 200V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 56-VFQFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8Ohm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TC8020K6-G
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All Technical Specifications
| FET Type | 6 N and 6 P-Channel |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 1A, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
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