TC6320TG-G
MOSFET N/P-CH 200V 8SOIC
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
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MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | TC6320TG-G |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Rds On (Max) | 7Ohm @ 1A, 10V |
| Vgs(th) (Max) | 2V @ 1mA |
| Input Capacitance (Ciss) | 110pF @ 25V |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TC6320TG-G by Microchip Technology is an N-channel power MOSFET rated at 200V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7Ohm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TC6320TG-G
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 1A, 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 25V |
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