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Vishay SiliconixTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

SUD50P04-40P-T4-E3

MOSFET P-CH 40V 6A/8A TO252

SUD50P04-40P-T4-E3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSUD50P04-40P-T4-E3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)40mOhm @ 5A, 10V
Vgs(th) (Max)2.7V @ 250µA
Gate Charge (Qg)60 nC @ 10 V
Input Capacitance (Ciss)1555 pF @ 20 V
Power Dissipation (Max)2.4W (Ta), 24W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageTO-252AA
RoHSRoHS
Part StatusObsolete

Application & Notes

SUD50P04-40P-T4-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 40mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.7V @ 250µA
Rds On (Max) @ Id, Vgs40mOhm @ 5A, 10V
Power Dissipation (Max)2.4W (Ta), 24W (Tc)
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds1555 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6A (Ta), 8A (Tc)

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