SUD40N02-08-E3
MOSFET N-CH 20V 40A TO252
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
TrenchFET®
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SUD40N02-08-E3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 8.5mOhm @ 20A, 4.5V |
| Vgs(th) (Max) | 600mV @ 250µA (Min) |
| Gate Charge (Qg) | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) | 2660 pF @ 20 V |
| Power Dissipation (Max) | 8.3W (Ta), 71W (Tc) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | TO-252AA |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SUD40N02-08-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.5mOhm @ 20A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SUD40N02-08-E3
Alternatives & Replacements
View All →SFT1423-S-TL-E
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MOSFET N-CH 25V 10A/32A DPAK
FDD8451
POWER FIELD-EFFECT TRANSISTOR, 9
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 20A, 4.5V |
| Power Dissipation (Max) | 8.3W (Ta), 71W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
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