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STMicroelectronicsTO-247-3RoHS

STY30NK90Z

MOSFET N-CH 900V 26A MAX247

STY30NK90Z by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Series

SuperMESH™

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTY30NK90Z
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)900 V
Rds On (Max)260mOhm @ 14A, 10V
Vgs(th) (Max)4.5V @ 150µA
Gate Charge (Qg)490 nC @ 10 V
Input Capacitance (Ciss)12000 pF @ 25 V
Power Dissipation (Max)450W (Tc)
Drive Voltage10V
Supplier Device PackageMAX247™
RoHSRoHS
Part StatusObsolete

Application & Notes

STY30NK90Z by STMicroelectronics is an N-channel power MOSFET rated at 900 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 260mOhm @ 14A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 150µA
Rds On (Max) @ Id, Vgs260mOhm @ 14A, 10V
Power Dissipation (Max)450W (Tc)
Gate Charge (Qg) (Max) @ Vgs490 nC @ 10 V
Drain to Source Voltage (Vdss)900 V
Input Capacitance (Ciss) (Max) @ Vds12000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C26A (Tc)

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