STW75N65DM6-4
N-CHANNEL 650 V, 33 MOHM TYP., 7
Transistors Fets Mosfets Single
TO-247-4
Active
$13.36 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STW75N65DM6-4 |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 36mOhm @ 37.5A, 10V |
| Vgs(th) (Max) | 4.75V @ 250µA |
| Gate Charge (Qg) | 118 nC @ 10 V |
| Input Capacitance (Ciss) | 5700 pF @ 100 V |
| Power Dissipation (Max) | 480W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-247-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
STW75N65DM6-4 by STMicroelectronics is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 36mOhm @ 37.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STW75N65DM6-4
Alternatives & Replacements
View All →IPZ60R017C7XKSA1
MOSFET N-CH 600V 109A TO247-4
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C3M0030090K
SICFET N-CH 900V 63A TO247-4
C3M0120100K
SICFET N-CH 1000V 22A TO247-4L
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 37.5A, 10V |
| Power Dissipation (Max) | 480W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
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