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STMicroelectronicsTO-247-3RoHS

STW62NM60N

MOSFET N-CH 600V 65A TO247

STW62NM60N by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-247-3

Series

MDmesh™ II

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTW62NM60N
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)49mOhm @ 32.5A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)174 nC @ 10 V
Input Capacitance (Ciss)5800 pF @ 100 V
Power Dissipation (Max)450W (Tc)
Drive Voltage10V
Supplier Device PackageTO-247-3
RoHSRoHS
Part StatusObsolete

Application & Notes

STW62NM60N by STMicroelectronics is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 49mOhm @ 32.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs49mOhm @ 32.5A, 10V
Power Dissipation (Max)450W (Tc)
Gate Charge (Qg) (Max) @ Vgs174 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds5800 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C65A (Tc)

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