STS2DPFS20V
MOSFET P-CH 20V 2.5A 8SO
Transistors Fets Mosfets Single
8-SOIC (0.154", 3.90mm Width)
STripFET™ II
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STS2DPFS20V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 200mOhm @ 1A, 4.5V |
| Vgs(th) (Max) | 600mV @ 250µA |
| Gate Charge (Qg) | 4.7 nC @ 4.5 V |
| Input Capacitance (Ciss) | 315 pF @ 15 V |
| Power Dissipation (Max) | 2W (Tc) |
| Drive Voltage | 2.7V, 4.5V |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
STS2DPFS20V by STMicroelectronics is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 200mOhm @ 1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STS2DPFS20V
Alternatives & Replacements
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FDFS2P753Z
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 600mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1A, 4.5V |
| Power Dissipation (Max) | 2W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
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