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STMicroelectronicsTO-236-3, SC-59, SOT-23-3RoHS

STR2P3LLH6

MOSFET P-CH 30V 2A SOT-23

STR2P3LLH6 by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Series

STripFET™ H6

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTR2P3LLH6
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)56mOhm @ 1A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)6 nC @ 4.5 V
Input Capacitance (Ciss)639 pF @ 25 V
Power Dissipation (Max)350mW (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageSOT-23-3
RoHSRoHS
Part StatusActive

Application & Notes

STR2P3LLH6 by STMicroelectronics is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 56mOhm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs56mOhm @ 1A, 10V
Power Dissipation (Max)350mW (Tc)
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds639 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2A (Ta)

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