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STMicroelectronicsTO-236-3, SC-59, SOT-23-3RoHS

STR2N2VH5

MOSFET N-CH 20V 2.3A SOT23

STR2N2VH5 by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Series

STripFET™ V

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTR2N2VH5
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)30mOhm @ 2A, 4.5V
Vgs(th) (Max)700mV @ 250µA (Min)
Gate Charge (Qg)4.6 nC @ 4.5 V
Input Capacitance (Ciss)367 pF @ 16 V
Power Dissipation (Max)350mW (Tc)
Drive Voltage2.5V, 4.5V
Supplier Device PackageSOT-23-3
RoHSRoHS
Part StatusActive

Application & Notes

STR2N2VH5 by STMicroelectronics is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30mOhm @ 2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id700mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs30mOhm @ 2A, 4.5V
Power Dissipation (Max)350mW (Tc)
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds367 pF @ 16 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.3A (Tj)

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