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STMicroelectronicsTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)RoHS

STQ1NC45R-AP

MOSFET N-CH 450V 500MA TO92-3

STQ1NC45R-AP by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Series

SuperMESH™

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTQ1NC45R-AP
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)450 V
Rds On (Max)4.5Ohm @ 500mA, 10V
Vgs(th) (Max)3.7V @ 250µA
Gate Charge (Qg)7 nC @ 10 V
Input Capacitance (Ciss)160 pF @ 25 V
Power Dissipation (Max)3.1W (Tc)
Drive Voltage10V
Supplier Device PackageTO-92-3
RoHSRoHS
Part StatusActive

Application & Notes

STQ1NC45R-AP by STMicroelectronics is an N-channel power MOSFET rated at 450 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.5Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.7V @ 250µA
Rds On (Max) @ Id, Vgs4.5Ohm @ 500mA, 10V
Power Dissipation (Max)3.1W (Tc)
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Drain to Source Voltage (Vdss)450 V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C500mA (Tc)

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