STLD200N4F6AG
MOSFET N-CH 40V 120A POWERFLAT
Transistors Fets Mosfets Single
8-PowerWDFN
Automotive, AEC-Q101, STripFET™ F6
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STLD200N4F6AG |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 1.5mOhm @ 75A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Gate Charge (Qg) | 172 nC @ 10 V |
| Input Capacitance (Ciss) | 10700 pF @ 10 V |
| Power Dissipation (Max) | 158W (Tc) |
| Drive Voltage | 6.5V, 10V |
| Supplier Device Package | PowerFlat™ (5x6) Dual Side |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
STLD200N4F6AG by STMicroelectronics is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.5mOhm @ 75A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STLD200N4F6AG
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 75A, 10V |
| Power Dissipation (Max) | 158W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 172 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10700 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
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