STL19N60DM2
MOSFET N-CH 600V 11A PWRFLAT HV
Transistors Fets Mosfets Single
8-PowerVDFN
MDmesh™ DM2
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STL19N60DM2 |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 320mOhm @ 5.5A, 10V |
| Vgs(th) (Max) | 5V @ 250µA |
| Gate Charge (Qg) | 21 nC @ 10 V |
| Power Dissipation (Max) | 90W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
STL19N60DM2 by STMicroelectronics is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 320mOhm @ 5.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STL19N60DM2
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 5.5A, 10V |
| Power Dissipation (Max) | 90W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
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