STL13DP10F6
MOSFET 2P-CH 100V 13A PWRFLAT56
Transistors Fets Mosfets Arrays
8-PowerVDFN
DeepGATE™, STripFET™ VI
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STL13DP10F6 |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) | 180mOhm @ 1.7A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 16.5nC @ 10V |
| Input Capacitance (Ciss) | 864pF @ 25V |
| Power Dissipation (Max) | 62.5W |
| Supplier Device Package | PowerFlat™ (5x6) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
STL13DP10F6 by STMicroelectronics is an N-channel power MOSFET rated at 100V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 180mOhm @ 1.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STL13DP10F6
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 62.5W |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 864pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 13A |
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