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STMicroelectronicsTO-262-3 Long Leads, I²Pak, TO-262AARoHS

STI55NF03L

MOSFET N-CH 30V 55A I2PAK

STI55NF03L by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

STripFET™ II

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTI55NF03L
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-60°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)13mOhm @ 27.5A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)27 nC @ 4.5 V
Input Capacitance (Ciss)1265 pF @ 25 V
Power Dissipation (Max)80W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageI2PAK
RoHSRoHS
Part StatusActive

Application & Notes

STI55NF03L by STMicroelectronics is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13mOhm @ 27.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±16V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs13mOhm @ 27.5A, 10V
Power Dissipation (Max)80W (Tc)
Gate Charge (Qg) (Max) @ Vgs27 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1265 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C55A (Tc)

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