STGWT80H65FB
IGBT 650V 120A 469W TO3P-3L
Transistors Igbts Single
TO-3P-3, SC-65-3
Obsolete
$6.33 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STGWT80H65FB |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 469 W |
| Supplier Device Package | TO-3P |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
STGWT80H65FB by STMicroelectronics is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STGWT80H65FB
Alternatives & Replacements
View All →FGA20S120M
IGBT, 40A, 1200V, N-CHANNEL
SGH10N60RUFDTU
IGBT, 16A, 600V, N-CHANNEL
SGH40N60UFTU
IGBT 600V 40A TO3P
FGA25S125P
IGBT, 50A, 1250V, N-CHANNEL
FGA90N30DTU
IGBT, 90A, 300V, N-CHANNEL
FGA30T65SHD
IGBT TRENCH/FS 650V 60A TO3PN
All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 414 nC |
| Power - Max | 469 W |
| Test Condition | 400V, 80A, 10Ohm, 15V |
| Switching Energy | 2.1mJ (on), 1.5mJ (off) |
| Td (on/off) @ 25°C | 84ns/280ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
| Current - Collector (Ic) (Max) | 120 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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