STGWA20H65DFB2
TRENCH GATE FIELD-STOP 650 V, 20
Transistors Igbts Single
TO-247-3
HB2
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STGWA20H65DFB2 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 147 W |
| Supplier Device Package | TO-247 Long Leads |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
STGWA20H65DFB2 by STMicroelectronics is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STGWA20H65DFB2
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 56 nC |
| Power - Max | 147 W |
| Test Condition | 400V, 20A, 10Ohm, 15V |
| Switching Energy | 265µJ (on), 214µJ (off) |
| Td (on/off) @ 25°C | 16ns/78.8ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 20A |
| Reverse Recovery Time (trr) | 215 ns |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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