STGW50H65DFB2-4
TRENCH GATE FIELD-STOP, 650 V, 5
Transistors Igbts Single
TO-247-4
HB2
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STGW50H65DFB2-4 |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 272 W |
| Supplier Device Package | TO-247-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
STGW50H65DFB2-4 by STMicroelectronics is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STGW50H65DFB2-4
Alternatives & Replacements
View All →NGTB25N120FL2WAG
IGBT FIELD STOP 1.2KV TO247-4
NGTB40N120FL2WAG
IGBT FIELD STOP 1200V 160A TO247
IGZ100N65H5XKSA1
IGBT TRENCH 650V 161A TO247-4
IKZ75N65EL5XKSA1
IGBT 650V 100A TO247-4
NGTB50N65FL2WAG
IGBT FIELD STOP 650V 160A TO247
IKZ75N65NH5XKSA1
IGBT TRENCH 650V 90A TO247-4
All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 151 nC |
| Power - Max | 272 W |
| Test Condition | 400V, 50A, 12Ohm, 15V |
| Switching Energy | 629µJ (on), 478µJ (off) |
| Td (on/off) @ 25°C | 18ns/128ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 50A |
| Reverse Recovery Time (trr) | 92 ns |
| Current - Collector (Ic) (Max) | 86 A |
| Current - Collector Pulsed (Icm) | 150 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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