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STMicroelectronicsTO-247-3RoHS

STGW30NC60W

IGBT 600V 60A 200W TO220

STGW30NC60W by STMicroelectronics
Subcategory

Transistors Igbts Single

Package

TO-247-3

Series

PowerMESH™

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTGW30NC60W
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)200 W
Supplier Device PackageTO-247-3
RoHSRoHS
Part StatusObsolete

Application & Notes

STGW30NC60W by STMicroelectronics is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Input TypeStandard
Gate Charge102 nC
Power - Max200 W
Test Condition390V, 20A, 10Ohm, 15V
Switching Energy305µJ (on), 181µJ (off)
Td (on/off) @ 25°C29.5ns/118ns
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)150 A
Voltage - Collector Emitter Breakdown (Max)600 V

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