STGP4M65DF2
IGBT M SERIES 650V 4A LOW LOSS
Transistors Igbts Single
TO-220-3
M
Active
$1.00 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STGP4M65DF2 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 68 W |
| Supplier Device Package | TO-220 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
STGP4M65DF2 by STMicroelectronics is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STGP4M65DF2
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 15.2 nC |
| Power - Max | 68 W |
| Test Condition | 400V, 4A, 47Ohm, 15V |
| Switching Energy | 40µJ (on), 136µJ (off) |
| Td (on/off) @ 25°C | 12ns/86ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
| Reverse Recovery Time (trr) | 133 ns |
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Pulsed (Icm) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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