STGD3NB60SDT4
IGBT 600V 6A 48W DPAK
;;2.jpg)
Transistors Igbts Single
TO-252-3, DPak (2 Leads + Tab), SC-63
PowerMESH™
Active
$1.13 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | STMicroelectronics |
| Model | STGD3NB60SDT4 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Power Dissipation (Max) | 48 W |
| Supplier Device Package | DPAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
STGD3NB60SDT4 by STMicroelectronics is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for STGD3NB60SDT4
Alternatives & Replacements
View All →NGTB10N60R2DT4G
IGBT 600V 20A DPAK
FGD3N60LSDTM-T-FS
IGBT, 6A, 600V, N-CHANNEL
NGD15N41ACLT4G
INSULATED GATE BIPOLAR TRANSISTO
SGR15N40LTF
IGBT, 400V, N-CHANNEL, TO-252
SGR6N60UFTF
N-CHANNEL IGBT
NGD8205NT4G
IGBT 390V 20A 125W DPAK
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 18 nC |
| Power - Max | 48 W |
| Test Condition | 480V, 3A, 1kOhm, 15V |
| Switching Energy | 1.15mJ (off) |
| Td (on/off) @ 25°C | 125µs/- |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 3A |
| Reverse Recovery Time (trr) | 1.7 µs |
| Current - Collector (Ic) (Max) | 6 A |
| Current - Collector Pulsed (Icm) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.