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STMicroelectronicsTO-262-3 Full Pack, I²PakRoHS

STFI5N95K3

MOSFET N-CH 950V 4A I2PAKFP

STFI5N95K3 by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Full Pack, I²Pak

Series

SuperMESH3™

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTFI5N95K3
Package / CaseTO-262-3 Full Pack, I²Pak
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)950 V
Rds On (Max)3.5Ohm @ 2A, 10V
Vgs(th) (Max)5V @ 100µA
Gate Charge (Qg)19 nC @ 10 V
Input Capacitance (Ciss)460 pF @ 25 V
Power Dissipation (Max)25W (Tc)
Drive Voltage10V
Supplier Device PackageI2PAKFP (TO-281)
RoHSRoHS
Part StatusObsolete

Application & Notes

STFI5N95K3 by STMicroelectronics is an N-channel power MOSFET rated at 950 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Full Pack, I²Pak package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.5Ohm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 100µA
Rds On (Max) @ Id, Vgs3.5Ohm @ 2A, 10V
Power Dissipation (Max)25W (Tc)
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Drain to Source Voltage (Vdss)950 V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)

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