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STMicroelectronicsTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

STD28P3LLH6AG

MOSFET P-CH 30V 12A DPAK

STD28P3LLH6AG by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

Automotive, AEC-Q101, STripFET™ H6

Status

Active

Price available on request

MOQ: 2500 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTD28P3LLH6AG
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)30mOhm @ 6A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)29 nC @ 10 V
Input Capacitance (Ciss)1480 pF @ 25 V
Power Dissipation (Max)33W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageDPAK
RoHSRoHS
Part StatusActive

Application & Notes

STD28P3LLH6AG by STMicroelectronics is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 30mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±18V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs30mOhm @ 6A, 10V
Power Dissipation (Max)33W (Tc)
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1480 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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