SSM6P39TU,LF
SMALL SIGNAL MOSFET P-CHX2 VDSS-
Transistors Fets Mosfets Arrays
6-SMD, Flat Leads
Active
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MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6P39TU,LF |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 213mOhm @ 1A, 4V |
| Vgs(th) (Max) | 1V @ 1mA |
| Gate Charge (Qg) | 6.4nC @ 4V |
| Input Capacitance (Ciss) | 250pF @ 10V |
| Power Dissipation (Max) | 500mW (Ta) |
| Supplier Device Package | UF6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6P39TU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 213mOhm @ 1A, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM6P39TU,LF
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Power - Max | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Rds On (Max) @ Id, Vgs | 213mOhm @ 1A, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4nC @ 4V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
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