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Toshiba Semiconductor and Storage6-TSSOP, SC-88, SOT-363RoHS

SSM6N43FU,LF

MOSFET 2N-CH 20V 0.5A US6

SSM6N43FU,LF by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Arrays

Package

6-TSSOP, SC-88, SOT-363

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM6N43FU,LF
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Rds On (Max)630mOhm @ 200mA, 5V
Vgs(th) (Max)1V @ 1mA
Gate Charge (Qg)1.23nC @ 4V
Input Capacitance (Ciss)46pF @ 10V
Power Dissipation (Max)200mW
Supplier Device PackageUS6
RoHSRoHS
Part StatusActive

Application & Notes

SSM6N43FU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 630mOhm @ 200mA, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate, 1.5V Drive
Power - Max200mW
Vgs(th) (Max) @ Id1V @ 1mA
Rds On (Max) @ Id, Vgs630mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs1.23nC @ 4V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds46pF @ 10V
Current - Continuous Drain (Id) @ 25°C500mA

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