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Toshiba Semiconductor and StorageSOT-563, SOT-666RoHS

SSM6N37FE,LM

MOSFET 2N-CH 20V 0.25A 2-2N1D

SSM6N37FE,LM by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Arrays

Package

SOT-563, SOT-666

Status

Active

Price available on request

MOQ: 4000 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM6N37FE,LM
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Rds On (Max)2.2Ohm @ 100mA, 4.5V
Vgs(th) (Max)1V @ 1mA
Input Capacitance (Ciss)12pF @ 10V
Power Dissipation (Max)150mW
Supplier Device PackageES6
RoHSRoHS
Part StatusActive

Application & Notes

SSM6N37FE,LM by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.2Ohm @ 100mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max150mW
Vgs(th) (Max) @ Id1V @ 1mA
Rds On (Max) @ Id, Vgs2.2Ohm @ 100mA, 4.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds12pF @ 10V
Current - Continuous Drain (Id) @ 25°C250mA

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