PC
Toshiba Semiconductor and Storage6-SMD, Flat LeadsRoHS

SSM6L40TU,LF

X34 PB-F UF6 S-MOS (LF) TRANSIST

SSM6L40TU,LF by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Arrays

Package

6-SMD, Flat Leads

Status

Active

$0.51 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM6L40TU,LF
Package / Case6-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)30V
Rds On (Max)122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Vgs(th) (Max)2.6V @ 1mA, 2V @ 1mA
Gate Charge (Qg)5.1nC @ 10V, 2.9nC @ 10V
Input Capacitance (Ciss)180pF @ 15V, 120pF @ 15V
Power Dissipation (Max)500mW (Ta)
Supplier Device PackageUF6
RoHSRoHS
Part StatusActive

Application & Notes

SSM6L40TU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN and P-Channel
FET FeatureLogic Level Gate, 4V Drive
Power - Max500mW (Ta)
Vgs(th) (Max) @ Id2.6V @ 1mA, 2V @ 1mA
Rds On (Max) @ Id, Vgs122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs5.1nC @ 10V, 2.9nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 15V, 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta), 1.4A (Ta)

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