SSM6L39TU,LF
MOSFET N/P-CH 20V 0.8A UF6
Transistors Fets Mosfets Arrays
6-SMD, Flat Leads
Active
Price available on request
MOQ: 3000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6L39TU,LF |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 143mOhm @ 600MA, 4V |
| Vgs(th) (Max) | 1V @ 1mA |
| Input Capacitance (Ciss) | 268pF @ 10V |
| Power Dissipation (Max) | 500mW |
| Supplier Device Package | UF6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6L39TU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 143mOhm @ 600MA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM6L39TU,LF
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Power - Max | 500mW |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Rds On (Max) @ Id, Vgs | 143mOhm @ 600MA, 4V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 268pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 800mA |
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