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Toshiba Semiconductor and Storage6-SMD, Flat LeadsRoHS

SSM6L36TU,LF

SMALL SIGNAL MOSFET N-CH + P-CH

SSM6L36TU,LF by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Arrays

Package

6-SMD, Flat Leads

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM6L36TU,LF
Package / Case6-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)20V
Rds On (Max)630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
Vgs(th) (Max)1V @ 1mA
Gate Charge (Qg)1.23nC @ 4V, 1.2nC @ 4V
Input Capacitance (Ciss)46pF @ 10V, 43pF @ 10V
Power Dissipation (Max)500mW (Ta)
Supplier Device PackageUF6
RoHSRoHS
Part StatusActive

Application & Notes

SSM6L36TU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN and P-Channel
FET FeatureLogic Level Gate, 1.5V Drive
Power - Max500mW (Ta)
Vgs(th) (Max) @ Id1V @ 1mA
Rds On (Max) @ Id, Vgs630mOhm @ 200mA, 5V, 1.31Ohm @ 100mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.23nC @ 4V, 1.2nC @ 4V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds46pF @ 10V, 43pF @ 10V
Current - Continuous Drain (Id) @ 25°C500mA (Ta), 330mA (Ta)

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