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Toshiba Semiconductor and StorageSOT-563, SOT-666RoHS

SSM6J53FE(TE85L,F)

MOSFET P-CH 20V 1.8A ES6

SSM6J53FE(TE85L,F) by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

SOT-563, SOT-666

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM6J53FE(TE85L,F)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)136mOhm @ 1A, 2.5V
Vgs(th) (Max)1V @ 1mA
Gate Charge (Qg)10.6 nC @ 4 V
Input Capacitance (Ciss)568 pF @ 10 V
Power Dissipation (Max)500mW (Ta)
Drive Voltage1.5V, 2.5V
Supplier Device PackageES6
RoHSRoHS
Part StatusObsolete

Application & Notes

SSM6J53FE(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 136mOhm @ 1A, 2.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA
Rds On (Max) @ Id, Vgs136mOhm @ 1A, 2.5V
Power Dissipation (Max)500mW (Ta)
Gate Charge (Qg) (Max) @ Vgs10.6 nC @ 4 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds568 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 2.5V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)

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