SSM6J512NU,LF
MOSFET P-CH 12V 10A 6UDFNB
Transistors Fets Mosfets Single
6-WDFN Exposed Pad
U-MOSVII
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6J512NU,LF |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 12 V |
| Rds On (Max) | 16.2mOhm @ 4A, 8V |
| Vgs(th) (Max) | 1V @ 1mA |
| Gate Charge (Qg) | 19.5 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1400 pF @ 6 V |
| Power Dissipation (Max) | 1.25W (Ta) |
| Drive Voltage | 1.8V, 8V |
| Supplier Device Package | 6-UDFNB (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6J512NU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 16.2mOhm @ 4A, 8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM6J512NU,LF
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Rds On (Max) @ Id, Vgs | 16.2mOhm @ 4A, 8V |
| Power Dissipation (Max) | 1.25W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 19.5 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 6 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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