SSM6J216FE,LF
MOSFET P-CHANNEL 12V 4.8A ES6
Transistors Fets Mosfets Single
SOT-563, SOT-666
U-MOSVI
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6J216FE,LF |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 12 V |
| Rds On (Max) | 32mOhm @ 3.5A, 4.5V |
| Vgs(th) (Max) | 1V @ 1mA |
| Gate Charge (Qg) | 12.7 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1040 pF @ 12 V |
| Power Dissipation (Max) | 700mW (Ta) |
| Drive Voltage | 1.5V, 4.5V |
| Supplier Device Package | ES6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6J216FE,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 32mOhm @ 3.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM6J216FE,LF
Alternatives & Replacements
View All →SCH1331-S-TL-H
MOSFET P-CH 12V 3A SCH6
SCH1436-TL-H
MOSFET N-CH 30V 1.8A 6SCH
SCH1343-TL-H
MOSFET P-CH 20V 3.5A 6SCH
SCH1345-TL-H
MOSFET P-CH 20V 4.5A SOT563/SCH6
SCH1330-TL-H
MOSFET P-CH 20V 1.5A 6SCH
SCH1337-TL-H
P-CHANNEL MOSFET
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 3.5A, 4.5V |
| Power Dissipation (Max) | 700mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
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