SSM3K35AFS,LF
MOSFET N-CHANNEL 20V 250MA SSM
Transistors Fets Mosfets Single
SC-75, SOT-416
U-MOSIII
Active
$0.26 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM3K35AFS,LF |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 1.1Ohm @ 150mA, 4.5V |
| Vgs(th) (Max) | 1V @ 100µA |
| Gate Charge (Qg) | 0.34 nC @ 4.5 V |
| Input Capacitance (Ciss) | 36 pF @ 10 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Drive Voltage | 1.2V, 4.5V |
| Supplier Device Package | SSM |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM3K35AFS,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-75, SOT-416 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.1Ohm @ 150mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM3K35AFS,LF
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 150mA, 4.5V |
| Power Dissipation (Max) | 500mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 0.34 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Ta) |
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