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Toshiba Semiconductor and StorageTO-236-3, SC-59, SOT-23-3RoHS

SSM3K301T(TE85L,F)

MOSFET N-CH 20V 3.5A TSM

SSM3K301T(TE85L,F) by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM3K301T(TE85L,F)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)56mOhm @ 2A, 4V
Gate Charge (Qg)4.8 nC @ 4 V
Input Capacitance (Ciss)320 pF @ 10 V
Power Dissipation (Max)700mW (Ta)
Drive Voltage1.8V, 4V
Supplier Device PackageTSM
RoHSRoHS
Part StatusObsolete

Application & Notes

SSM3K301T(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 56mOhm @ 2A, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs56mOhm @ 2A, 4V
Power Dissipation (Max)700mW (Ta)
Gate Charge (Qg) (Max) @ Vgs4.8 nC @ 4 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds320 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4V
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)

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