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MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

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Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

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Toshiba Semiconductor and StorageTO-236-3, SC-59, SOT-23-3RoHS

SSM3J352F,LF

Name: SSM3J352F,LF
Brand: Toshiba Semiconductor and Storage
SKU: SSM3J352F,LF

MOSFET P-CH 20V 2A S-MINI

SSM3J352F,LF by Toshiba Semiconductor and Storage

Parameters

Parameter	Value
Brand	Toshiba Semiconductor and Storage
Model	SSM3J352F,LF
Package / Case	TO-236-3, SC-59, SOT-23-3
Mounting Type	Surface Mount
Operating Temperature	150°C
FET Type	P-Channel
Drain to Source Voltage (Vdss)	20 V
Rds On (Max)	110mOhm @ 2A, 10V
Vgs(th) (Max)	1.2V @ 1mA
Gate Charge (Qg)	5.1 nC @ 4.5 V
Input Capacitance (Ciss)	210 pF @ 10 V
Power Dissipation (Max)	1.2W (Ta)
Drive Voltage	1.8V, 10V
Supplier Device Package	S-Mini
RoHS	RoHS
Part Status	Active

Application & Notes

SSM3J352F,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 110mOhm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	P-Channel
Vgs (Max)	±12V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2V @ 1mA
Rds On (Max) @ Id, Vgs	110mOhm @ 2A, 10V
Power Dissipation (Max)	1.2W (Ta)
Gate Charge (Qg) (Max) @ Vgs	5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	210 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 10V
Current - Continuous Drain (Id) @ 25°C	2A (Ta)

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