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Toshiba Semiconductor and StorageTO-236-3, SC-59, SOT-23-3RoHS

SSM3J321T(TE85L,F)

MOSFET P-CH 20V 5.2A TSM

SSM3J321T(TE85L,F) by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Series

U-MOSV

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelSSM3J321T(TE85L,F)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)46mOhm @ 3A, 4.5V
Vgs(th) (Max)1V @ 1mA
Gate Charge (Qg)8.1 nC @ 4.5 V
Input Capacitance (Ciss)640 pF @ 10 V
Power Dissipation (Max)700mW (Ta)
Drive Voltage1.5V, 4.5V
Supplier Device PackageTSM
RoHSRoHS
Part StatusObsolete

Application & Notes

SSM3J321T(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 46mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA
Rds On (Max) @ Id, Vgs46mOhm @ 3A, 4.5V
Power Dissipation (Max)700mW (Ta)
Gate Charge (Qg) (Max) @ Vgs8.1 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds640 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C5.2A (Ta)

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