SSM3J306T(TE85L,F)
MOSFET P-CH 30V 2.4A TSM
Transistors Fets Mosfets Single
TO-236-3, SC-59, SOT-23-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM3J306T(TE85L,F) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 117mOhm @ 1A, 10V |
| Gate Charge (Qg) | 2.5 nC @ 15 V |
| Input Capacitance (Ciss) | 280 pF @ 15 V |
| Power Dissipation (Max) | 700mW (Ta) |
| Drive Voltage | 4V, 10V |
| Supplier Device Package | TSM |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SSM3J306T(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 117mOhm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM3J306T(TE85L,F)
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 117mOhm @ 1A, 10V |
| Power Dissipation (Max) | 700mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 15 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
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